2SK2611 Toshiba Silicon N-channel

SKU: 20195859

215.00 LE

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Type Designator: 2SK2611
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 900 V
Maximum Drain Current |Id|: 9 A
Total Gate Charge (Qg): 58 nC
Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm
Package: TO3P

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