IRFZ44E 60V Single N-Channel HEXFET Power MOSFET

SKU: 20195653

42.00 LE

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Type Designator: IRFZ44E

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 110 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 48 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 40 nC

Maximum Drain-Source On-State Resistance (Rds): 0.023 Ohm

Package: TO220AB

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