IXFN38N100Q2 N CHANNEL POWER MOSFET

SKU: 20195578

Price:
633.00 LE

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Stock:
In stock

Description

Type Designator: IXFN38N100Q2

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 890 W

Maximum Drain-Source Voltage |Vds|: 1000 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 38 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 250 nC

Rise Time (tr): 300 nS

Maximum Drain-Source On-State Resistance (Rds): 0.25 Ohm

Package: SOT227B

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