SSH6N80- N Channel MOSFET

SKU: 20196023

57.00 LE

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Type Designator: SSH6N80

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 170 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 150 nC

Rise Time (tr): 200 nS

Drain-Source Capacitance (Cd): 210 pF

Maximum Drain-Source On-State Resistance (Rds): 1.9 Ohm

Package: TO-3P

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